RoseStreet能源实验室宣布一项突破性的实验室进展，首次多频带的光伏设备将会安装三个明显的光吸收区并且能够让这三个光吸收区融为一体成为一个单层薄膜设备。
这一突破是基于RSLE的IBand技术，是第一个已知的在实验演示中中间带太阳能电池在实践中减少的。这说明技术实现高效率的薄膜可能会吸收潜在的太阳光谱全谱35％以上的太阳能效率。
高效太阳能电池需要优化对整个太阳光谱的利用。目前，这一复杂和昂贵的技术已经取得了成效，其中有几个不同带隙太阳能电池串联。一个更简单的方法，其中一个半导体的几个不同太阳光谱对太阳光谱的不同部分有不同的反应，但从未实现。
oseStreet Labs Energy has announced a breakthrough laboratory demonstration of the first known multiband photovoltaic device featuring three distinct light absorption regions integrated into a single layer thin film device.
This breakthrough is based on RSLE's IBand technology and is the first known intermediate band solar cell reduced to practice in a laboratory demonstration. This technology illustrates great promise for high efficiency thin film solar efficiencies above 35% by potentially capturing the full spectrum of the sun's spectrum.
Efficient solar cells require optimized utilization of the whole solar spectrum. Currently this is achieved in a complex and expensive technology in which several solar cells with different band gaps are connected in series. A much simpler approach in which a single semiconductor has several different gaps sensitive to different parts of the solar spectrum has been proposed but never realized.
The intermediate band solar cell developed by RSLE, is a thin film technology based on the discovery of highly mismatched alloys. The simple and elegant three bandgaps, one junction device has the potential of significantly improved solar light absorption and higher power output than the III-V triple junction compound semiconductor devices that presently hold the world record for solar efficiency.
RSLE's demonstration device was fabricated on high volume CVD technology thereby validating the potential for high volume commercialization.
Bob Forcier, CEO, of RSLE, stated, "Although we are three to four years away from high volume production with the IBand product, this development opens up a new class of semiconductor devices for photovoltaic conversion and other advanced semiconductor applications. It fits seamlessly with our Hybrid PV commercialization."
Wladek Walukiewicz, CTO, of RSLE, announced, "This demonstration is a major breakthrough in our photovoltaic semiconductor roadmap which will allow us to go to the next step in our PV research at an accelerated pace.
The IBand technology is synergistic with our thin film Nitride Hybrid product development and will allow upside potential for higher solar conversion efficiencies compared to conventional technologies."
RoseStreet Labs Energy, Inc. (RSLE) is a privately held firm headquartered in Phoenix, Arizona. RSLE is commercializing full spectrum photovoltaic devices for high performance applications.
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