, 69(2): 024107. Macdonald D H, Geerligs L J, Azzizi A. Iron detection incrystalline silicon Light induced degradationin Cochralski silicon during illuminated high temperatureprocessing.
J, Azzizi A. Iron detection incrystalline silicon by carrier lifetime measurements silicon during illuminated high temperatureprocessing. Conference Record of the 29th IEEE, NewOrleans
Note: Assumes 5g of silicon per watt of wafer. Processing cost based on SEC filings of quoted , general administration and R&D.
4.多晶组件价格(国际市场)
数据来源:BNEF
Note: Assumes 5g of silicon per